Fe1 C2 O6

semiconductor

· Fe1 C2 O6

Fe₁C₂O₆ is an iron-based mixed-valence oxide compound that functions as a semiconductor material. This composition suggests a layered or framework iron oxide with carbon and oxygen ligands, likely synthesized for research applications rather than established industrial use. The material belongs to the family of iron oxide semiconductors and coordination compounds that show potential for catalysis, energy storage, and electronic device applications where controlled band gap and electron transport are critical.

catalytic materials researchelectrochemical energy storagesemiconductor photocatalysisbattery electrode developmentmaterials science characterizationexploratory functional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.561	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.222	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Fe1 C2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control