F6 Rb3 Tl1 is an experimental semiconductor compound containing rubidium and thallium with fluorine, belonging to the class of halide-based semiconductors. This material is primarily of research interest in solid-state physics and materials science, with potential applications in optoelectronic devices, photovoltaic systems, and specialized radiation detection where halide semiconductors show promise for tunable bandgaps and high charge-carrier mobility. The inclusion of thallium and rubidium suggests investigation into niche semiconductor properties, though such compounds remain largely in the research phase and are not yet widely adopted in mainstream commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 31.00 | GPa | — | ||
Shear Modulus(G) | 10.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.189 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.479 | eV/atom | — |