F6 As1 In1

semiconductor

· F6 As1 In1

F6As1In1 is a III-V compound semiconductor composed of indium and arsenic in a specific stoichiometric ratio, belonging to the family of binary and ternary semiconductors used in optoelectronic and high-frequency applications. This material is primarily of research and development interest for advanced semiconductor device engineering, where indium arsenide compounds are valued for their direct bandgap properties and high electron mobility. The arsenic-indium combination offers potential advantages in infrared detection, high-speed electronics, and quantum device applications compared to more conventional semiconductors like silicon or gallium arsenide.

infrared photodetectorshigh-speed integrated circuitsquantum dots and nanostructuresmillimeter-wave devicesresearch semiconductorsoptoelectronic components

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	3,050.6	ksi	—
Shear Modulus(G)	1,377.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.043	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.138	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

F6 As1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control