F2 Ti1 is a titanium-based semiconductor material, likely representing a titanium fluoride compound or titanium-doped semiconductor phase. While specific composition details are not provided, materials in this family are primarily of research interest rather than established commercial products, being investigated for potential applications in optoelectronics, photocatalysis, and advanced thin-film devices where titanium's properties can be leveraged in a semiconducting matrix.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,950.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,468.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06290 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.926 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data