F2 Hg1 is a mercury-based semiconductor compound representing an experimental or specialized material within the mercury halide semiconductor family. This material is primarily of research interest for optoelectronic and photonic applications where mercury-based compounds offer unique band gap properties and optical characteristics distinct from conventional semiconductors. While not widely deployed in mainstream industrial production, materials in this class are investigated for specialized infrared detection, thermal imaging, and high-frequency electronic devices where their specific electronic properties provide advantages over alternatives like silicon or III-V compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,160.5 | ksi | — | ||
Shear Modulus(G) | 2,831.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8617 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.483 | eV/atom | — |