F16 As₂Sb₂ is an experimental IV-VI semiconductor compound combining arsenic and antimony in a specific stoichiometric ratio, belonging to the narrow-gap or semimetal class of materials. This research-phase compound is investigated for potential optoelectronic and thermoelectric applications where its narrow bandgap and moderate mechanical stiffness could enable infrared detection, thermal energy conversion, or mid-IR photonic devices. While not yet widely commercialized, materials in this arsenic-antimony family are of interest to researchers exploring alternatives to lead-based semiconductors or exploring exotic band structures for next-generation solid-state devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,108.6 | ksi | — | ||
Shear Modulus(G) | 1,346 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.596 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.248 | eV/atom | — |