F14 I2 is a semiconductor compound from the III-V or II-VI family, likely composed of elements from groups 13-15 or 12-16 of the periodic table. This material is positioned for optoelectronic and electronic device applications where direct bandgap properties and carrier mobility are critical performance factors. The compound's mechanical and elastic characteristics make it suitable for integrated circuit substrates, photodetectors, or light-emitting devices where both structural integrity and electronic function must coexist.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13.27 | GPa | — | ||
Shear Modulus(G) | 5.780 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.512 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.312 | eV/atom | — |