ErTe

semiconductor

· ErTe

ErTe is an intermetallic compound composed of erbium and tellurium, belonging to the family of rare-earth tellurides. It is primarily a research-stage semiconductor material investigated for potential applications in thermoelectric devices and quantum materials, where rare-earth tellurides have shown promise for temperature-dependent conductivity and thermal transport manipulation.

Thermoelectric devicesResearch semiconductorsRare-earth compoundsLow-temperature electronicsQuantum material studiesHeat-to-electricity conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	8.659	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.9000	eV	—
↳	0.3110 range 0.000–0.6220median of 2 measurements	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-8.820	µV/K	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-1.243	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ErTe

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control