Erbium nitride (ErN) is a rare-earth transition metal nitride compound belonging to the ceramic semiconductor family, synthesized primarily through thin-film deposition techniques. It is investigated for applications requiring wide-bandgap semiconducting behavior combined with high hardness and thermal stability, though it remains largely in the research and development phase rather than mature industrial production. ErN's potential advantages include unique electronic properties at elevated temperatures and resistance to oxidation, making it of interest for advanced microelectronic and high-temperature device applications where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,957.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.1900 | - | — | ||
Shear Modulus(G) | 19,994.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3855 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.000 | eV | — | ||
| ↳ | 0.2380 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -146.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.010 | eV/atom | — |