Erbium nitride (ErN) is a rare-earth transition metal nitride compound belonging to the ceramic semiconductor family, synthesized primarily through thin-film deposition techniques. It is investigated for applications requiring wide-bandgap semiconducting behavior combined with high hardness and thermal stability, though it remains largely in the research and development phase rather than mature industrial production. ErN's potential advantages include unique electronic properties at elevated temperatures and resistance to oxidation, making it of interest for advanced microelectronic and high-temperature device applications where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 179.0 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.1900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 137.9 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 10.67 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.000 | eV | Measured | ||
| ↳ | 0.2380 | eV | DFT · OptB88vdW | ||
| ↳ | 1.203 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 15.49 | - | DFT · OptB88vdW | ||
| ↳ | 7.274 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.01000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.01000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00252 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00233 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -146.9 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 212.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.66 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -2.010 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data