ErInO3
semiconductorErInO3 is an erbium indium oxide ceramic compound belonging to the perovskite family of semiconductors, combining rare-earth and post-transition metal elements in a crystalline oxide structure. This material is primarily investigated in research contexts for optoelectronic and photonic applications, leveraging erbium's optical activity (particularly near the 1.5 μm telecom wavelength) combined with indium oxide's electrical conductivity. ErInO3 represents an emerging class of multifunctional oxides with potential advantages in integrated photonics and next-generation semiconductor devices, though it remains largely in the exploratory phase compared to mature commercial alternatives like yttrium-doped indium oxide or pure In2O3.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |