ErIn3S6 is a ternary semiconductor compound combining erbium, indium, and sulfur, belonging to the rare-earth chalcogenide family. This material is primarily of research interest for optoelectronic and photonic applications, where rare-earth doping and sulfide-based semiconductors offer tunable bandgaps and potential luminescent properties. While not yet established in high-volume industrial production, ErIn3S6 represents an emerging material for exploring novel light-emission, detection, or quantum-confinement phenomena in the semiconductor research space.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.280 | eV | — |