ErB6
semiconductorErB6 is a rare-earth hexaboride ceramic compound combining erbium with boron in a 1:6 stoichiometric ratio, belonging to the family of rare-earth borides known for their refractory and electronic properties. This material is primarily investigated in research contexts for thermionic emission applications and high-temperature semiconducting devices, where its combination of thermal stability and electron-emission characteristics offers potential advantages over conventional cathode materials. Engineers consider ErB6 and related hexaborides for specialized applications requiring materials that remain stable and conductive at extreme temperatures, though current industrial adoption remains limited compared to established alternatives like tungsten or lanthanum hexaboride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |