ErAsS is a ceramic compound combining erbium, arsenic, and sulfur, representing a rare-earth chalcogenide material family. This material exists primarily in research and development contexts, where it is investigated for potential applications in infrared optics, semiconductor devices, and solid-state physics due to the optical and electronic properties characteristic of rare-earth arsenic sulfides. Engineers would consider ErAsS-based materials where narrow-bandgap semiconductors, thermal stability, or specialized infrared transparency are critical, though commercial availability and scalability remain limited compared to established ceramic and semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2684 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.655 | eV/atom | — |