ErAcO3 is an erbium-containing oxide compound classified as a semiconductor, belonging to the family of rare-earth-doped or erbium-based ceramic oxides. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where erbium's characteristic near-infrared emission wavelengths (around 1.5 μm) align with telecommunications and fiber-optic standards. ErAcO3 would be of interest to engineers developing integrated photonic devices, optical amplifiers, or solid-state laser systems where rare-earth semiconductors offer advantages in light generation and signal processing compared to conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.463 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.539 | eV/atom | — |