Er₄In₂ is an intermetallic compound combining erbium (a rare-earth lanthanide) and indium, classified as a semiconductor material. This compound belongs to the family of rare-earth intermetallics, which are primarily investigated in research contexts for their unique electronic and magnetic properties rather than as established commercial materials. Er₄In₂ is of interest in solid-state physics and materials science for potential applications requiring rare-earth semiconductor behavior, though it remains largely in the experimental stage without widespread industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,710.4 | ksi | — | ||
Shear Modulus(G) | 4,170.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3570 | eV/atom | — |