Er3 In1 N1

Er₃In₁N₁ is a rare-earth nitride semiconductor compound combining erbium and indium in a ternary nitride system. This material belongs to the family of rare-earth metal nitrides, which are primarily of research and development interest for advanced optoelectronic and high-temperature semiconductor applications. The erbium-indium nitride composition positions it as a candidate for exploring novel band structure properties and potential integration into next-generation wide-bandgap device architectures, though it remains largely experimental with limited commercial deployment.