Er3 In1 N1
semiconductor· Er3 In1 N1
Er₃In₁N₁ is a rare-earth nitride semiconductor compound combining erbium and indium in a ternary nitride system. This material belongs to the family of rare-earth metal nitrides, which are primarily of research and development interest for advanced optoelectronic and high-temperature semiconductor applications. The erbium-indium nitride composition positions it as a candidate for exploring novel band structure properties and potential integration into next-generation wide-bandgap device architectures, though it remains largely experimental with limited commercial deployment.
wide-bandgap semiconductors (research)optoelectronic device developmenthigh-temperature electronicsrare-earth nitride compoundsmaterials research and characterizationnext-generation semiconductor platforms
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.