Er3 Ga1 C1
semiconductor· Er3 Ga1 C1
Er₃Ga₁C₁ is an experimental ternary carbide semiconductor combining erbium, gallium, and carbon. This research compound belongs to the rare-earth carbide family and is primarily of academic interest for investigating novel electronic and thermal properties in rare-earth-doped semiconductors. While not yet established in commercial production, materials in this composition space are being explored for potential high-temperature electronic applications and as model systems for understanding phase stability and electronic behavior in complex carbide systems.
research/experimental semiconductorsrare-earth carbide materialshigh-temperature electronics (developmental)semiconductor physics studies
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.