Er3 Al1 N1

semiconductor

· Er3 Al1 N1

Er3Al1N1 is an experimental ternary nitride semiconductor compound combining erbium, aluminum, and nitrogen elements. This material belongs to the rare-earth nitride family and is primarily of research interest for advanced optoelectronic and photonic applications where rare-earth dopants can provide unique luminescence properties. While not yet established in mainstream industrial production, ternary rare-earth aluminum nitrides are being investigated for potential use in high-efficiency light-emitting devices, quantum well structures, and integrated photonic systems where the rare-earth content enables characteristic emission wavelengths unavailable in binary nitride semiconductors.

optoelectronic researchrare-earth photonicsexperimental semiconductorslight-emission applicationsquantum well structuresintegrated photonics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	14,329.7	ksi	—
Shear Modulus(G)	10,407.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.040	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er3 Al1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control