Er₂Zn₂As₂O₂ is an erbium-zinc arsenate oxide semiconductor compound, representing an experimental material in the rare-earth oxide and arsenate families. This compound is primarily of research interest for potential optoelectronic and photonic applications leveraging erbium's strong luminescence properties in the infrared region, particularly near the telecommunications wavelength of 1.55 μm. The material remains largely in the laboratory development phase; engineers considering it would be exploring next-generation light-emitting devices, integrated photonics, or specialized sensor applications where erbium doping or erbium compounds offer spectroscopic advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,141.3 | ksi | — | ||
Shear Modulus(G) | 6,237.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.298 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.944 | eV/atom | — |