Er₂Te₁O₂ is a rare-earth tellurium oxide semiconductor compound combining erbium with tellurium and oxygen. This is a research-phase material rather than an established commercial compound; it belongs to the family of rare-earth tellurides and oxides being investigated for potential optoelectronic and photonic applications, particularly where the unique electronic properties of erbium-doped systems could enable light emission, detection, or modulation at infrared wavelengths relevant to telecommunications and sensing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 108.9 | GPa | — | ||
Shear Modulus(G) | 64.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07560 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.087 | eV/atom | — |