Er2Se2I2 is a mixed-halide rare-earth semiconductor compound combining erbium, selenium, and iodine in a layered crystal structure. This is a research-stage material being investigated for potential optoelectronic and photonic applications, particularly in the infrared spectrum where erbium-based semiconductors show promise due to erbium's emission lines relevant to telecommunications wavelengths. The compound's mixed-anion composition offers tunable band structure and potential for engineering carrier transport properties, making it of interest to researchers exploring next-generation photonic devices and quantum materials, though industrial-scale applications remain limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,135.2 | ksi | — | ||
Shear Modulus(G) | 2,666.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.194 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.722 | eV/atom | — |