Er2S1O2 is an oxysulfide semiconductor compound combining erbium, sulfur, and oxygen, belonging to the rare-earth chalcogenide family of materials. This is primarily a research-stage compound investigated for its potential in optoelectronic and photonic applications, where rare-earth dopants and mixed anion systems offer tunable bandgaps and luminescent properties unavailable in conventional semiconductors. The material's appeal lies in potential integration into fiber-optic amplifiers, photovoltaic devices, or specialized light-emitting systems where erbium's characteristic near-infrared emission and the oxysulfide matrix's structural flexibility could provide advantages over silicates or oxides alone.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,136.9 | ksi | — | ||
Shear Modulus(G) | 10,565.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.186 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.470 | eV/atom | — |