Er₂I₆ is an erbium iodide compound belonging to the rare-earth halide semiconductor family. This material is primarily of research interest for optoelectronic and photonic applications, where rare-earth halides are explored for their potential in infrared emission, luminescence, and quantum optical devices. While not yet widely deployed in high-volume industrial production, erbium halides are investigated as candidates for next-generation optical fibers, quantum dots, and mid-infrared emitters where the 1.5 μm erbium emission line has established telecommunications relevance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,809.8 | ksi | — | ||
Shear Modulus(G) | 746.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.773 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.312 | eV/atom | — |