Er₂I₆ is an erbium iodide compound belonging to the rare-earth halide semiconductor family. This material is primarily of research interest for optoelectronic and photonic applications, where rare-earth halides are explored for their potential in infrared emission, luminescence, and quantum optical devices. While not yet widely deployed in high-volume industrial production, erbium halides are investigated as candidates for next-generation optical fibers, quantum dots, and mid-infrared emitters where the 1.5 μm erbium emission line has established telecommunications relevance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,809.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 746.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.773 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.312 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data