Er2 Bi6 O12

semiconductor

· Er2 Bi6 O12

Er₂Bi₆O₁₂ is a complex oxide semiconductor compound combining erbium and bismuth, belonging to the family of rare-earth bismuth oxides. This material is primarily of research interest rather than established commercial use, investigated for potential applications in optoelectronics, photocatalysis, and solid-state device engineering where the combined rare-earth and bismuth chemistry can produce tunable band gaps and interesting defect states.

photocatalytic materials researchrare-earth optoelectronicsthin-film semiconductor developmentvisible-light photocatalysismaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.126	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.947	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er2 Bi6 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control