Er1 N1 — Properties & Data | MatWorld

Er1 N1

semiconductor

· Er1 N1

Er1N1 is an experimental erbium nitride semiconductor compound, part of the rare-earth nitride family being investigated for optoelectronic and photonic applications. This material is primarily of research interest rather than established industrial production, with potential use in infrared light sources, thermal imaging devices, and next-generation semiconductor devices that exploit rare-earth electronic properties.

infrared optoelectronicsrare-earth semiconductorsphotonic researchthermal imaging componentsexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05690	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.063	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er1 N1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control