Er1 In3

semiconductor

· Er1 In3

Er₁In₃ is an intermetallic compound composed of erbium and indium, belonging to the rare-earth intermetallic family. This material is primarily of research and developmental interest for potential applications in advanced electronics and thermoelectric devices, where the combination of rare-earth and post-transition metal elements offers opportunities for tailored electronic and thermal properties. Compared to conventional semiconductors, intermetallics like Er₁In₃ are explored for specialized niche applications where conventional materials reach performance limits, though commercial adoption remains limited and the material is not yet widely standardized in production engineering.

rare-earth semiconductorsthermoelectric researchadvanced electronicsexperimental materialsintermetallic compoundslow-temperature physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00920	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er1 In3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control