Er1 In1

semiconductor

· Er1 In1

Er1In1 is an intermetallic compound composed of erbium and indium, belonging to the rare-earth intermetallic material family. This material is primarily of research and development interest for advanced semiconductor and thermoelectric applications, where the combination of rare-earth and group III elements offers potential for tailored electronic properties and high-temperature performance.

thermoelectric devicessemiconductor researchhigh-temperature electronicsrare-earth intermetallicsquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	61.80	GPa	—
Shear Modulus(G)	28.26	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00620	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4470	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control