Er1 In1 Ni4

semiconductor

· Er1 In1 Ni4

Er1In1Ni4 is an intermetallic compound combining erbium, indium, and nickel in a 1:1:4 stoichiometric ratio. This is a research-phase material studied primarily for its electronic and magnetic properties rather than as an established commercial alloy. The erbium-nickel-indium system represents an experimental composition within the broader family of rare-earth intermetallics, with potential applications in advanced electronics and magnetic devices where the rare-earth contribution provides unique electronic band structure and magnetic coupling effects.

experimental semiconductorsrare-earth intermetallics researchmagnetic device prototypingelectronic materials developmentcryogenic electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	20,165	ksi	—
Shear Modulus(G)	7,965.5	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er1 In1 Ni4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control