Er1 Bi2 I1 O4

semiconductor
· Er1 Bi2 I1 O4

Er₁Bi₂I₁O₄ is an erbium-bismuth iodide oxide semiconductor, a rare-earth halide compound that exists primarily in research and development contexts rather than established commercial production. This material belongs to the family of mixed-valent rare-earth compounds and is of interest for photonic and optoelectronic applications due to the luminescent properties characteristic of erbium-doped systems. While not yet widely deployed in high-volume manufacturing, materials in this class are being explored for next-generation light-emitting devices, waveguide applications, and specialized sensing systems where rare-earth luminescence offers advantages over conventional semiconductors.

research photonicsrare-earth luminescenceoptoelectronic prototypingspecialized sensingquantum materials developmentexperimental light-emission devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
Pa
Shear Modulus(G)
Pa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.