Er₁Bi₂Br₁O₄ is an experimental erbium-bismuth bromine oxide compound classified as a semiconductor, part of the broader family of mixed-metal halide oxides under active research for optoelectronic and photonic applications. This material belongs to an emerging class of compounds being investigated for potential use in solid-state lighting, radiation detection, and advanced optical devices, where the combination of rare-earth (erbium) and heavy-metal (bismuth) elements may offer unique electronic and optical properties distinct from conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.81 | GPa | — | ||
Shear Modulus(G) | 45.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.504 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.182 | eV/atom | — |