Er1Bi1 is an intermetallic compound combining erbium and bismuth, belonging to the rare-earth bismuth semiconductor family. This material exists primarily in research and specialized applications, valued for its potential in thermoelectric devices and low-temperature physics studies where the combination of rare-earth and bismuth properties offers unique electronic and thermal transport characteristics. Engineers consider Er1Bi1 when exploring next-generation thermoelectric converters, cryogenic sensors, or specialized optoelectronic components where bismuth's bismuth's high carrier mobility and erbium's rare-earth contributions provide advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,378.4 | ksi | — | ||
Shear Modulus(G) | 5,627.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8660 | eV/atom | — |