Er1As1 is a binary III-V semiconductor compound composed of erbium and arsenic, belonging to the rare-earth pnictide family of materials. This compound is primarily of research and theoretical interest, investigated for potential applications in infrared optoelectronics and quantum materials due to erbium's optical properties in the telecom wavelength region. Its practical industrial use remains limited compared to more established III-V semiconductors (GaAs, InP), but it represents an emerging material platform for specialized photonic and quantum device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.056 | eV/atom | — |