Er(InS2)3

semiconductor

· Er(InS2)3

Er(InS2)3 is a rare-earth indium sulfide compound semiconductor, where erbium cations are incorporated into an indium disulfide host lattice. This is a research-stage material within the broader family of rare-earth chalcogenides, investigated primarily for its potential optoelectronic and photonic properties, particularly in infrared and near-infrared applications where erbium's characteristic emission wavelengths (around 1.5 μm) are valuable. Engineers would consider this material for highly specialized photonics applications where rare-earth-doped semiconductors offer advantages in optical signal processing, but the material remains primarily in development rather than established industrial production.

infrared photonicsrare-earth-doped semiconductorsoptical signal processingresearch/exploratory applicationsquantum dot precursor materialsoptoelectronic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er(InS2)3

Electrical Properties

Regulatory Screening

Environmental

Export Control