DyInO3 is an oxide semiconductor compound combining dysprosium (a rare earth element) and indium in a 1:1:3 stoichiometry. This material remains primarily in the research phase, investigated for its potential in optoelectronic and photonic applications where the rare earth dopant can provide unique luminescent or magnetic properties. Engineers and researchers explore DyInO3 and similar rare earth indium oxides for next-generation solid-state devices, though it has not yet achieved widespread industrial adoption compared to more established semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2966 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.635 | eV | — | ||
| ↳ | 2.670 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01350 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.146 | eV/atom | — | ||
| ↳ | -2.744 | eV/atom | — |