Dy3GaS6 is a rare-earth gallium sulfide semiconductor compound combining dysprosium with gallium and sulfur. This material belongs to the family of III-VI semiconductors and remains primarily in the research and development phase, investigated for its potential optoelectronic and photonic properties that could arise from its rare-earth dopant composition. The dysprosium content may enable unique luminescent or magnetic properties relative to conventional III-V or II-VI semiconductors, making it of interest for specialized photonic, sensing, or high-temperature electronic applications where rare-earth elements provide functional advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1974 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.810 | eV | — | ||
| ↳ | 2.025 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000600 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.875 | eV/atom | — |