Dy3 Mn3 Ga2 Si1

semiconductor

· Dy3 Mn3 Ga2 Si1

Dy₃Mn₃Ga₂Si₁ is an intermetallic semiconductor compound combining rare-earth (dysprosium), transition metal (manganese), and p-block elements in a defined stoichiometric ratio. This is a research-phase material studied primarily for its potential magnetic and electronic properties rather than established industrial production. The dysprosium-manganese intermetallic family is of interest for advanced applications requiring combined magnetic ordering and semiconducting behavior, though practical engineering use remains limited to specialized research contexts and potential future device applications.

magnetic semiconductor researchrare-earth intermetallic compoundsexperimental spintronic materialshigh-temperature magnetic devicessolid-state physics researchemerging functional materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	9,651.4	ksi	—
Shear Modulus(G)	2,408.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00450	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Dy3 Mn3 Ga2 Si1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control