Dy3 In1 N1

semiconductor

· Dy3 In1 N1

Dy3In1N1 is a ternary nitride semiconductor compound combining dysprosium, indium, and nitrogen. This is an experimental research material rather than a commercial product, belonging to the rare-earth nitride family that shows promise for wide-bandgap semiconductor applications. The material's potential lies in high-temperature and high-power electronic devices where rare-earth nitrides offer superior thermal stability and electronic properties compared to conventional III-V semiconductors.

High-temperature semiconductors (research)Wide-bandgap electronics (development)Rare-earth compound semiconductorsPower device substrates (exploratory)Next-generation optoelectronics (early-stage)Materials discovery and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	13,628.8	ksi	—
Shear Modulus(G)	9,639.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.087	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Dy3 In1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control