Dy1Tl1O2 is an experimental mixed-metal oxide semiconductor containing dysprosium and thallium. This compound belongs to the family of rare-earth-transition metal oxides under investigation for novel electronic and photonic properties, though it remains primarily a research material without established commercial production. The combination of dysprosium (a lanthanide with strong magnetic properties) and thallium (a post-transition metal) in a 1:1:2 stoichiometry creates a material of interest for fundamental materials science studies into band structure engineering and potential applications in niche semiconductor or optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,681.8 | ksi | — | ||
Shear Modulus(G) | 6,831.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.633 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.574 | eV/atom | — |