Dy1 Bi2 I1 O4

semiconductor
· Dy1 Bi2 I1 O4

Dy₁Bi₂I₁O₄ is a rare-earth bismuth iodide oxide semiconductor, representing an emerging class of mixed-halide compounds with potential optoelectronic applications. This is primarily a research-phase material rather than an established commercial compound; compounds in this family are being investigated for photovoltaic devices, scintillators, and radiation detection due to their tunable band gaps and high atomic number elements that interact strongly with electromagnetic radiation. Engineers considering this material should recognize it as exploratory—suitable for fundamental device research and proof-of-concept work rather than near-term production applications—but notable for combining rare-earth and halide chemistry in ways that could enable next-generation semiconductors for high-energy physics, medical imaging, or specialized optical applications.

research semiconductorsscintillation detectorsradiation sensingoptoelectronic devicesphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
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Pa——
Shear Modulus(G)
—
Pa——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.