Dy₁Bi₂Br₁O₄ is a mixed-metal oxide-halide semiconductor compound containing dysprosium, bismuth, bromine, and oxygen. This is an experimental/research-stage material rather than an established commercial product; it belongs to the family of rare-earth and post-transition metal halide perovskites and hybrid compositions that are under investigation for optoelectronic and photonic applications. Materials in this compositional space are of interest because they combine rare-earth luminescence properties (dysprosium) with the semiconducting and structural characteristics of bismuth halides, potentially enabling novel photocatalytic, scintillation, or light-emission devices with tunable bandgaps.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,817.4 | ksi | — | ||
Shear Modulus(G) | 6,498.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.461 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.174 | eV/atom | — |