CuTeSBr is a copper-based chalcogenide compound containing tellurium, sulfur, and bromine elements. This is a quaternary semiconductor material primarily of research interest rather than established industrial production, with potential applications in photovoltaic devices and thermoelectric systems where mixed halide-chalcogenide compositions can offer tunable electronic properties. The material represents an exploratory class within copper chalcogenide semiconductors, positioned for investigation in next-generation energy conversion technologies where compositional flexibility enables optimization of bandgap and carrier transport.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1738 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.143 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2329 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data