CuTaOFN

semiconductor

· CuTaOFN

CuTaOFN is an experimental mixed-metal oxide fluoride nitride semiconductor compound containing copper, tantalum, oxygen, fluorine, and nitrogen. Research-phase materials in this chemical family are investigated for optoelectronic and photocatalytic applications, where the multi-anion composition can engineer band gaps and electronic properties distinct from single-anion oxides or nitrides. While not yet established in mainstream production, this material family appeals to researchers exploring advanced light-emission, photocatalysis, or wide-bandgap semiconductor platforms where conventional materials (GaN, TiO₂, or binary oxides) have design limitations.

photocatalysis researchoptoelectronic devicesvisible-light active semiconductorswide-bandgap engineeringexperimental thin-film applicationsUV/visible photoactive coatings

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—
Magnetic Moment(μB)	-1.408e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuTaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control