CuInS2 is a direct-bandgap III-V semiconductor compound belonging to the chalcopyrite family, composed of copper, indium, and sulfur. It is primarily investigated for thin-film photovoltaic applications, particularly as an absorber layer in solar cells and as a photoelectrochemical material for hydrogen generation, where its tunable bandgap and high light absorption coefficient make it a promising alternative to CdTe and CIGS technologies. The material remains largely in the research and development phase, with active interest in scalable manufacturing routes and stability improvements compared to lead halide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.500 | eV | — |