CuInCd₂Te₃ is a quaternary II-VI semiconductor compound combining copper, indium, cadmium, and tellurium—a research-stage material belonging to the chalcogenide semiconductor family. This composition is primarily investigated for photovoltaic and optoelectronic applications, particularly as an alternative absorber layer in thin-film solar cells where it may offer tunable bandgap and improved light absorption compared to conventional CdTe or CIGS systems. The material remains largely in development rather than mainstream production, with potential value in next-generation solar technologies and radiation detection where the cadmium-tellurium base provides inherent atomic density and sensitivity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — |