CuIn3S5 is a ternary chalcogenide semiconductor compound combining copper, indium, and sulfur in a layered crystal structure. This material is primarily investigated in photovoltaic and optoelectronic research contexts as an alternative absorber layer for thin-film solar cells and photodetectors, with potential advantages in tunable bandgap and lower toxicity compared to some competing compounds like CdTe or lead halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — |