CuIn2S3.5

semiconductor

· CuIn2S3.5

CuIn₂S₃.₅ is a quaternary copper indium sulfide compound belonging to the chalcogenide semiconductor family, characterized by mixed-valence sulfur stoichiometry. This material is primarily of research interest for photovoltaic and optoelectronic applications, where it is studied as a potential absorber layer or buffer material in thin-film solar cells and photodetectors, offering an alternative to conventional CIGS (copper indium gallium selenide) absorbers with tunable bandgap and compositional flexibility. Its appeal lies in the use of abundant sulfur rather than selenium and the possibility of bandgap engineering through composition control, though it remains largely in the development phase compared to commercialized thin-film photovoltaic technologies.

thin-film solar cellsphotovoltaic absorber layersphotodetectorsoptoelectronic devicessemiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.430	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuIn2S3.5

Electrical Properties

Regulatory Screening

Environmental

Export Control