CuIn2S3.5
semiconductorCuIn₂S₃.₅ is a quaternary copper indium sulfide compound belonging to the chalcogenide semiconductor family, characterized by mixed-valence sulfur stoichiometry. This material is primarily of research interest for photovoltaic and optoelectronic applications, where it is studied as a potential absorber layer or buffer material in thin-film solar cells and photodetectors, offering an alternative to conventional CIGS (copper indium gallium selenide) absorbers with tunable bandgap and compositional flexibility. Its appeal lies in the use of abundant sulfur rather than selenium and the possibility of bandgap engineering through composition control, though it remains largely in the development phase compared to commercialized thin-film photovoltaic technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |