CuHfO2F

semiconductor
· CuHfO2F

CuHfO2F is an experimental mixed-metal oxide fluoride compound combining copper, hafnium, oxygen, and fluorine—a composition that places it in the emerging family of complex oxyfluoride semiconductors. This material is primarily a research compound under investigation for advanced electronic and photonic applications, where the combination of hafnium's high dielectric strength and copper's electronic properties offers potential advantages in next-generation devices. The fluoride incorporation is notable for modifying bandgap, ionic conductivity, and defect chemistry compared to conventional oxides, making it of interest for optoelectronic and solid-state ionic applications, though commercial deployment remains limited.

experimental semiconductorsoptoelectronic devicessolid-state electrolytesthin-film electronics researchbandgap engineeringadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.