CuGeO2N

ceramic

· CuGeO2N

CuGeO₂N is an experimental ceramic compound combining copper, germanium, oxygen, and nitrogen—a quaternary nitride-oxide material under active research in materials science. This compound belongs to an emerging family of mixed-anion ceramics being investigated for semiconductor and photocatalytic applications, where the nitrogen incorporation modifies electronic structure and band gap relative to conventional oxides. While not yet in established industrial production, CuGeO₂N and related compositions show promise in photocatalysis, thin-film electronics, and energy conversion, positioning it as a candidate for next-generation functional ceramics if synthesis and scalability challenges are resolved.

photocatalytic materials (research phase)semiconductor applicationsthin-film depositionband-gap engineeringenvironmental remediation (potential)advanced ceramics R&D

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.4693	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental