CuGaN3

metal

· CuGaN3

CuGaN3 is a ternary nitride compound combining copper, gallium, and nitrogen, representing an emerging material in the semiconductor and optoelectronic research space. This compound is primarily of academic and experimental interest rather than established production use, with potential applications in wide-bandgap semiconductor devices where the copper-gallium-nitride system may offer unique electronic or photonic properties distinct from conventional GaN or copper-based alternatives.

experimental semiconductorswide-bandgap electronics researchoptoelectronic devicesnitride compound researchnext-generation device materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.236	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control